Optical and electrical properties of Al2O3 films containing silicon nanocrystals

Title properties of Al2O3 films subjected to Si ion implantation and annealing are studied. TEM reveals that Si nanocrystals are epitaxially formed in theta-Al2O3. Visible PL is observed from Al2O3 films containing Si nanocrystals. Visible PL seems to be related to quantum size effects in Si nanocry...

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Bibliographic Details
Published in:Journal of electronic materials 1999-05, Vol.28 (5), p.496-502
Main Authors: Yanagiya, S., Ishida, M.
Format: Article
Language:English
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Summary:Title properties of Al2O3 films subjected to Si ion implantation and annealing are studied. TEM reveals that Si nanocrystals are epitaxially formed in theta-Al2O3. Visible PL is observed from Al2O3 films containing Si nanocrystals. Visible PL seems to be related to quantum size effects in Si nanocrystals as well as localized radiative recombination centers located at the interface between Si nanocrystals and matrix, similar to porous Si and other Si nanostructures. The conduction mechanism in the samples is studied by using dc I-V measurements. The conduction properties depend on temperature and applied electric fields. The conduction behavior in low electric fields consists of thermally activated region dominated by Schottky conduction and nonthermally activated region in which carrier transport is controlled by space-charge-limited currents. The conduction behavior under relatively high electric fields is almost independent of temperature and well fitted by space-charge-limited conduction. 26 refs.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-999-0101-3