Saddle point excitonic resonances in BiI3 layered single crystals

Excitonic resonances near the critical saddle point of the M(1) type by van Hove have been revealed for the first time in the BiI3 layered semiconductor. Their main parameters are estimated. (Author)

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Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 1999-12, Vol.2 (4), p.19-22
Main Author: Kudryavtsev, O.O.
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description Excitonic resonances near the critical saddle point of the M(1) type by van Hove have been revealed for the first time in the BiI3 layered semiconductor. Their main parameters are estimated. (Author)
doi_str_mv 10.15407/spqeo2.04.019
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title Saddle point excitonic resonances in BiI3 layered single crystals
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