Droplet Hetero-Epitaxy of InAs Quantum Structures on InP Nanopyramids Formed by Selective-Area Flow Rate Modulation Epitaxy

Authors have grown InAs quantum structures by droplet heteroepitaxy on InP nanopyramids and investigated their luminescence property. InP nanopyramids with improved size control were formed by selective-area flow rate modulation epitaxy (FME). The standard deviation of the bottom size of the nanopyr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 2B), p.1026-1029
Main Authors: Oga, Ryo, Yamamoto, Syunsuke, Ohzawa, Itsuya, Fujiwara, Yasufumi, Takeda, Yoshikazu
Format: Article
Language:English
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Summary:Authors have grown InAs quantum structures by droplet heteroepitaxy on InP nanopyramids and investigated their luminescence property. InP nanopyramids with improved size control were formed by selective-area flow rate modulation epitaxy (FME). The standard deviation of the bottom size of the nanopyramids decreases by selective-area FME. Droplet hetero-epitaxy was carried out on InP nanopyramids to grow InAs quantum structures. The shape of the nanopyramids becomes sharper with longer TMIn supply time. In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence is observed. The mapping measurement of the PL intensities reveals that luminescence originates from the patterned area with the nanopyramids. The PL peak positions shift slightly to a longer wavelength region with increasing supply time. Results suggest that InAs quantum structures are formed on InP nanopyramids. 15 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.1026