Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an...

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Bibliographic Details
Published in:Journal of materials science 1999-10, Vol.34 (19), p.4711-4717
Main Authors: CHOI, W. B, JU, B. K, LEE, Y. H, OH, M. H, LEE, N. Y, SUNG, M. Y
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Borosilicate glass
Coating
Electron beams
Electronics
Exact sciences and technology
Field emission
Glass plates
Indium oxides
Indium tin oxides
Materials science
Microelectronic fabrication (materials and surfaces technology)
Secondary ion mass spectroscopy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon wafers
Tin
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Description
Summary:A silicon-to-In2O3:Sn coated glass bonding has been developed for the package of field emission arrays fabricated on the silicon wafer, utilizing a conventional silicon-to- silicon anodic bonding using the glass layer. A 1.8 μm Pyrex #7740 glass layer was deposited on the In2O3:Sn coated glass by an electron beam evaporation. It was confirmed that the composition of the glass layer was nearly the same as that of the bulk Pyrex #7740 glass plate. In this work, bonding the silicon and In2O3:Sn coated glass was achieved at a temperature of 190 °C with an applied voltage of 60 Vdc. A secondary ion mass spectroscopy analysis was used to confirm the modeled bonding kinetics of the silicon-to-In2O3:Sn coated glass.
ISSN:0022-2461
1573-4803
DOI:10.1023/A:1004654116591