A self-ion assisted beam (SIAB) source based upon unvala electron beam scheme

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. Th...

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Bibliographic Details
Published in:Thin solid films 1999-10, Vol.354 (1), p.29-33
Main Authors: Choi, Won-Kook, Song, Jae-Hoon, Kim, Ki-Hwan, Lee, Choong-Man, Choi, Sung-Chang, Song, Jong-Han, Jung, Hyung-Jin
Format: Article
Language:English
Subjects:
Cu thin film
Ionization efficiency
Resistivity
Self-ion assisted beam
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Summary:Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(99)00412-5