Fabrication and optical measurements of silicon on insulator photonic nanostructures

We report on results of the fabrication and optical measurements of silicon on insulator (SOI) nanostructures designed for photonic applications. Patterning has been done by electron beam lithography and reactive ion etching with an SF 6 and CHF 3 gas mixture. Both one dimensional (1D) and two dimen...

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Bibliographic Details
Published in:Microelectronic engineering 2002-07, Vol.61, p.529-536
Main Authors: Peyrade, D., Chen, Y., Talneau, A., Patrini, M., Galli, M., Marabelli, F., Agio, M., Andreani, L.C., Silberstein, E., Lalanne, P.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Microelectronic fabrication (materials and surfaces technology)
Nanofabrication
Optical and optoelectronic circuits
Photonic crystals
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator (SOI)
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Summary:We report on results of the fabrication and optical measurements of silicon on insulator (SOI) nanostructures designed for photonic applications. Patterning has been done by electron beam lithography and reactive ion etching with an SF 6 and CHF 3 gas mixture. Both one dimensional (1D) and two dimensional (2D) photonic lattices were studied by measuring dispersion curves above the light cone. Lateral Fabry-Perot resonators were also fabricated in a waveguide geometry, showing strong dependence of the transmission intensity as a function of the silicon filling factor and the number of air gaps in the Bragg-like mirrors.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00539-7