Homoepitaxial Growth of SrTiO3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370°C

Homoepitaxial growth of SrTiO3 without introducing any oxidants has been achieved at low temperatures. The growth was carried out by coevaporation of Sr and Ti metals under low O partial pressure (pO2 < 1 x 10-8 Pa). A clear RHEED intensity oscillation from the layer-by-layer growth of SrTiO3 was...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002-03, Vol.41 (Part 2, No. 3A), p.L269-L271
Main Authors: Shimoyama, Kazuo, Kiyohara, Masahiro, Uedono, Akira, Yamabe, Kikuo
Format: Article
Language:English
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Summary:Homoepitaxial growth of SrTiO3 without introducing any oxidants has been achieved at low temperatures. The growth was carried out by coevaporation of Sr and Ti metals under low O partial pressure (pO2 < 1 x 10-8 Pa). A clear RHEED intensity oscillation from the layer-by-layer growth of SrTiO3 was observed during the growth at a substrate temperature of 370 C. The deposited film had an approximately stoichiometric composition and single-phase of SrTiO3 from the analyses of AES and RHEED. O was automatically fed from the substrate to the growing surface. Instead, O vacancies were incorporated into the bulk of the substrate. The incorporated O vacancies were evaluated by positron annihilation. 21 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L269