Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

The low temperature (100/spl deg/C) deposition of Sc 2 O 3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm 2 HEMTs for both types of oxide passivation layers. Both Sc 2 O 3 and MgO pro...

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Bibliographic Details
Published in:IEEE electron device letters 2002-09, Vol.23 (9), p.505-507
Main Authors: Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Chemicals
Gallium nitride
HEMTs
MODFETs
Passivation
Plasma chemistry
Plasma devices
Plasma temperature
Power generation
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Summary:The low temperature (100/spl deg/C) deposition of Sc 2 O 3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm 2 HEMTs for both types of oxide passivation layers. Both Sc 2 O 3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN/sub x/ passivation which typically showed /spl les/2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc 2 O 3 or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.802592