Structure and conducting properties of La1-xSrxCoO3-δFilms

• Published in: Journal of the European Ceramic Society 1999-01, Vol.19 (6-7), p.819-822
• Main Authors: CHEN, X, WU, N. J, IGNATIEV, A
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion in solids; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Laser deposition; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Self-diffusion and ionic conduction in nonmetals; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transport properties of condensed matter (nonelectronic)
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/S0955-2219(98)00323-9

La1-xSrxCoO3-delta (LSCO) films were deposited on LaAlO3 (LAO), La1-xSrxGa1-yMgyO3-delta/LaAlO3 (LSGM/LAO) and YSZ substrates by pulsed laser deposition for application to thin film SOFC cathodes. The optimum conditions for deposition were determined for the different substrates in an ambient of 80-310 mTorr oxygen pressure and at a substrate temperature range of 450 to 750 C. The film structures were analysed by XRD, RBS and SEM. Epitaxial LSCO films were grown with (110) preferred orientation on YSZ, and with (100) orientation on LAO and LSGM/LAO. The electrical resistivity of the epitaxial LSCO films ranged from 0.01 to 0.0001 ohm cm, depending on the deposition temperature and substrate. The ionic conducting behaviour of the LSCO film on YSZ was investigated by impedance measurements. 13 refs.