Theory of the MOS/SOI tunnel diode

Theoretical model of the MOS/SOI tunnel diode is presented. Current-voltage characteristics of the MOS/SOI tunnel diodes with both the p-type and n-type semiconductor films are considered versus the front-gate voltage, back-gate voltage, front-gate oxide thickness, and the semiconductor film thickne...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 1999, Vol.48 (1), p.375-378
Main Authors: Badri, M., Majkusiak, B.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Theoretical model of the MOS/SOI tunnel diode is presented. Current-voltage characteristics of the MOS/SOI tunnel diodes with both the p-type and n-type semiconductor films are considered versus the front-gate voltage, back-gate voltage, front-gate oxide thickness, and the semiconductor film thickness. An influence of the neighborhood of the under-gate region is also included in quasi-two-dimensional model.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(99)00409-8