Temperature dependence of hot carrier induced MOSFET degradation at low gate bias

This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degradation at low gate bias. It has been found that the substrate current increases and the drain current degradation is more significant for high operating temperatur...

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Bibliographic Details
Published in:Microelectronics and reliability 1999, Vol.39 (6), p.809-814
Main Authors: Hong, Sung H., Nam, Sang M., Yun, Byung O., Lee, Byung J., Yu, Chong G., Park, Jong T.
Format: Article
Language:English
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Summary:This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degradation at low gate bias. It has been found that the substrate current increases and the drain current degradation is more significant for high operating temperature at low gate bias. It has been observed that the hot carrier induced performance degradation of a latch-type input buffer increases at the elevated temperature.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(99)00105-5