Static characteristics of high-barrier Schottky diode under high injection level

Static J– V, σ– J, γ– J characteristics based on numerical 1D simulation for Me– n– n + and Me– n structures are given. The forward voltage drop of the former structure is less then the last one under high level injection because of LH ( nn +) junction reflecting properties with respect to minority...

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Bibliographic Details
Published in:Solid-state electronics 1999-09, Vol.43 (9), p.1747-1753
Main Authors: Prokopyev, A.I., Mesheryakov, S.A.
Format: Article
Language:English
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Summary:Static J– V, σ– J, γ– J characteristics based on numerical 1D simulation for Me– n– n + and Me– n structures are given. The forward voltage drop of the former structure is less then the last one under high level injection because of LH ( nn +) junction reflecting properties with respect to minority carriers. Holes stimulate base conductivity modulation but, in spite of this, the hole current gives a negligible contribution to the total current. It is shown that the injection ratio is a less significant parameter compared to base conductivity modulation if it is necessary to estimate charge storage. Influence of substrate is investigated. In addition to forming an LH barrier, the substrate acts as a source of majority carriers and defines the forward voltage drop across the diode structure. Bandgap narrowing in the substrate is taken into account. A comparison with experimental results is also given.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00138-0