A high-speed, high-sensitivity silicon lateral trench photodetector

We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an...

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Bibliographic Details
Published in:IEEE electron device letters 2002-07, Vol.23 (7), p.395-397
Main Authors: Min Yang, Kern Rim, Rogers, D.L., Schaub, J.D., Welser, J.J., Kuchta, D.M., Boyd, D.C., Rodier, F., Rabidoux, P.A., Marsh, J.T., Ticknor, A.D., Qingyun Yang, Upham, A., Ramac, S.C.
Format: Article
Language:English
Subjects:
Absorption
Bandwidth
Compatibility
Detectors
Devices
High speed
Light absorption
Operational amplifiers
Optical receivers
Optical surface waves
Photodetectors
PIN photodiodes
Silicon
Substrates
Trenches
Wavelengths
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Summary:We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS transimpedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.1015212