Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

• Published in: Journal of electronic materials 2002-12, Vol.31 (12), p.1341-1346
• Main Authors: TING, Shyh-Fann, FANG, Yean-Kuen, HSIEH, Wen-Tse, TSAIR, Yong-Shiuan, CHANG, Cheng-Nan, LIN, Chun-Sheng, HSIEH, Ming-Chun, CHIANG, Hsin-Che, HO, Jyh-Jier
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-002-0119-2

Cubic crystalline Si1-x-yCxNy films have been grown using various carbon sources by rapid-thermal CVD (RTCVD). The characteristics of the Si1-x-yCxNy films grown with SiH3CH3, C2H4, and C3H8 are examined and compared by XPS spectra, SEM images, and TEM patterns. The XPS spectra show that the differences of chemical composition and chemical-bonding state are co-related to the C bonding type of the different carbon source. The SEM images and TEM analysis indicate that the better Si1-x-yCxNy film can be obtained using C3H8 gas as the carbon source. In addition, correlations between the growing stages to the microstructure of the cubic-crystalline Si1-x-yCxNy films have been illustrated in detail. 15 refs.