Electrical field effects in n-type MOSFET and metal–nonmetal transition

The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the e...

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Bibliographic Details
Published in:Microelectronics 2002-04, Vol.33 (4), p.371-373
Main Authors: Souza de Almeida, J., Moysés Araújo, C., Pepe, I., Ferreira da Silva, A.
Format: Article
Language:English
Subjects:
Electric field
Metal-oxide semiconductor field effect transistors
Metal–nonmetal transition
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Summary:The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/S0026-2692(01)00134-3