Electrical field effects in n-type MOSFET and metal–nonmetal transition

The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the e...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics 2002-04, Vol.33 (4), p.371-373
Main Authors: Souza de Almeida, J., Moysés Araújo, C., Pepe, I., Ferreira da Silva, A.
Format: Article
Language:English
Subjects:
Electric field
Metal-oxide semiconductor field effect transistors
Metal–nonmetal transition
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c286t-273997b6a5926d8b9616b7e64814c1049f61a898ed8eccf3ee0924ac402acd0c3
container_end_page 373
container_issue 4
container_start_page 371
container_title Microelectronics
container_volume 33
creator Souza de Almeida, J.
Moysés Araújo, C.
Pepe, I.
Ferreira da Silva, A.
description The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.
doi_str_mv 10.1016/S0026-2692(01)00134-3
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27175437</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0026269201001343</els_id><sourcerecordid>27175437</sourcerecordid><originalsourceid>FETCH-LOGICAL-c286t-273997b6a5926d8b9616b7e64814c1049f61a898ed8eccf3ee0924ac402acd0c3</originalsourceid><addsrcrecordid>eNqFkM1KAzEUhYMoWKuPIGQluhi9-WkyWYmUqoVKF9V1SDN3IDLN1GQquPMdfEOfxGnrwp2re7icc-B8hJwzuGbA1M0CgKuCK8MvgV0BMCELcUAGrNSm4MKwwz_6mJzk_AoAI83lgEwnDfouBe8aWgdsKop13X8yDZHGovtYI32aL-4nz9TFiq6wc83351ds407SLrmYQxfaeEqOatdkPPu9Q_LSp8aPxWz-MB3fzQrPS9UVXAtj9FK5keGqKpdGMbXUqGTJpGcgTa2YK02JVYne1wIRDJfOS-DOV-DFkFzse9epfdtg7uwqZI9N4yK2m2y5Znokhe6No73RpzbnhLVdp7By6cMysFtwdgfObsFZYHYHzoo-d7vPYb_iPWCy2QeMHquQejK2asM_DT-panVc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27175437</pqid></control><display><type>article</type><title>Electrical field effects in n-type MOSFET and metal–nonmetal transition</title><source>ScienceDirect Freedom Collection</source><creator>Souza de Almeida, J. ; Moysés Araújo, C. ; Pepe, I. ; Ferreira da Silva, A.</creator><creatorcontrib>Souza de Almeida, J. ; Moysés Araújo, C. ; Pepe, I. ; Ferreira da Silva, A.</creatorcontrib><description>The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.</description><identifier>ISSN: 1879-2391</identifier><identifier>ISSN: 0026-2692</identifier><identifier>EISSN: 1879-2391</identifier><identifier>DOI: 10.1016/S0026-2692(01)00134-3</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Electric field ; Metal-oxide semiconductor field effect transistors ; Metal–nonmetal transition</subject><ispartof>Microelectronics, 2002-04, Vol.33 (4), p.371-373</ispartof><rights>2002 Elsevier Science Ltd</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c286t-273997b6a5926d8b9616b7e64814c1049f61a898ed8eccf3ee0924ac402acd0c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Souza de Almeida, J.</creatorcontrib><creatorcontrib>Moysés Araújo, C.</creatorcontrib><creatorcontrib>Pepe, I.</creatorcontrib><creatorcontrib>Ferreira da Silva, A.</creatorcontrib><title>Electrical field effects in n-type MOSFET and metal–nonmetal transition</title><title>Microelectronics</title><description>The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.</description><subject>Electric field</subject><subject>Metal-oxide semiconductor field effect transistors</subject><subject>Metal–nonmetal transition</subject><issn>1879-2391</issn><issn>0026-2692</issn><issn>1879-2391</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkM1KAzEUhYMoWKuPIGQluhi9-WkyWYmUqoVKF9V1SDN3IDLN1GQquPMdfEOfxGnrwp2re7icc-B8hJwzuGbA1M0CgKuCK8MvgV0BMCELcUAGrNSm4MKwwz_6mJzk_AoAI83lgEwnDfouBe8aWgdsKop13X8yDZHGovtYI32aL-4nz9TFiq6wc83351ds407SLrmYQxfaeEqOatdkPPu9Q_LSp8aPxWz-MB3fzQrPS9UVXAtj9FK5keGqKpdGMbXUqGTJpGcgTa2YK02JVYne1wIRDJfOS-DOV-DFkFzse9epfdtg7uwqZI9N4yK2m2y5Znokhe6No73RpzbnhLVdp7By6cMysFtwdgfObsFZYHYHzoo-d7vPYb_iPWCy2QeMHquQejK2asM_DT-panVc</recordid><startdate>200204</startdate><enddate>200204</enddate><creator>Souza de Almeida, J.</creator><creator>Moysés Araújo, C.</creator><creator>Pepe, I.</creator><creator>Ferreira da Silva, A.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200204</creationdate><title>Electrical field effects in n-type MOSFET and metal–nonmetal transition</title><author>Souza de Almeida, J. ; Moysés Araújo, C. ; Pepe, I. ; Ferreira da Silva, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-273997b6a5926d8b9616b7e64814c1049f61a898ed8eccf3ee0924ac402acd0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Electric field</topic><topic>Metal-oxide semiconductor field effect transistors</topic><topic>Metal–nonmetal transition</topic><toplevel>online_resources</toplevel><creatorcontrib>Souza de Almeida, J.</creatorcontrib><creatorcontrib>Moysés Araújo, C.</creatorcontrib><creatorcontrib>Pepe, I.</creatorcontrib><creatorcontrib>Ferreira da Silva, A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Souza de Almeida, J.</au><au>Moysés Araújo, C.</au><au>Pepe, I.</au><au>Ferreira da Silva, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical field effects in n-type MOSFET and metal–nonmetal transition</atitle><jtitle>Microelectronics</jtitle><date>2002-04</date><risdate>2002</risdate><volume>33</volume><issue>4</issue><spage>371</spage><epage>373</epage><pages>371-373</pages><issn>1879-2391</issn><issn>0026-2692</issn><eissn>1879-2391</eissn><abstract>The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0026-2692(01)00134-3</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1879-2391
ispartof Microelectronics, 2002-04, Vol.33 (4), p.371-373
issn 1879-2391
0026-2692
1879-2391
language eng
recordid cdi_proquest_miscellaneous_27175437
source ScienceDirect Freedom Collection
subjects Electric field
Metal-oxide semiconductor field effect transistors
Metal–nonmetal transition
title Electrical field effects in n-type MOSFET and metal–nonmetal transition
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T22%3A43%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20field%20effects%20in%20n-type%20MOSFET%20and%20metal%E2%80%93nonmetal%20transition&rft.jtitle=Microelectronics&rft.au=Souza%20de%20Almeida,%20J.&rft.date=2002-04&rft.volume=33&rft.issue=4&rft.spage=371&rft.epage=373&rft.pages=371-373&rft.issn=1879-2391&rft.eissn=1879-2391&rft_id=info:doi/10.1016/S0026-2692(01)00134-3&rft_dat=%3Cproquest_cross%3E27175437%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c286t-273997b6a5926d8b9616b7e64814c1049f61a898ed8eccf3ee0924ac402acd0c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27175437&rft_id=info:pmid/&rfr_iscdi=true