Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures

• Published in: Thin solid films 2002-07, Vol.414 (1), p.56-62
• Main Authors: Murata, M, Tokuda, N, Hojo, D, Yamabe, K
• Format: Article
• Language: English
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Leakage current; Microroughness; Oxidation; Oxide; Physics; Reliability; Solid surfaces and solid-solid interfaces; Surface conductivity and carrier phenomena; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Topography
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(02)00432-7

Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a case of 1.4-nm-thick SiO 2, even if a relationship between the leakage current distribution and the atomic step positions is not observed at the initial stage, the high voltage stress application makes the relationship clear. The atomic step edges have a great influence on their initial leakage and the reliability of the ultrathin oxide.