Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures

Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a cas...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2002-07, Vol.414 (1), p.56-62
Main Authors: Murata, M, Tokuda, N, Hojo, D, Yamabe, K
Format: Article
Language:English
Subjects:
Annealing
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Leakage current
Microroughness
Oxidation
Oxide
Physics
Reliability
Solid surfaces and solid-solid interfaces
Surface conductivity and carrier phenomena
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Topography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203
cites cdi_FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203
container_end_page 62
container_issue 1
container_start_page 56
container_title Thin solid films
container_volume 414
creator Murata, M
Tokuda, N
Hojo, D
Yamabe, K
description Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a case of 1.4-nm-thick SiO 2, even if a relationship between the leakage current distribution and the atomic step positions is not observed at the initial stage, the high voltage stress application makes the relationship clear. The atomic step edges have a great influence on their initial leakage and the reliability of the ultrathin oxide.
doi_str_mv 10.1016/S0040-6090(02)00432-7
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27175445</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609002004327</els_id><sourcerecordid>27175445</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEqXwCUjZgGAROraTOFkhVPGSKrEA1pZrT6ghTYrt8Ph7nLaCJat56Nw7mkvIMYULCrSYPAJkkBZQwRmw8zhwloodMqKlqFImON0lo19knxx4_woAlDE-InKG6k29YKJ757ANibE-ODvvg-3axLZJ3wSnwiJ23Zc1mMStt43VQ-1drTQmnzYsEh9wNQno3LCJFr0OvUN_SPZq1Xg82tYxeb65fprepbOH2_vp1SzVvChDyuZiTtFAXnMUlaDUMJZTwIKZEnOqOBWgVV4ZU-iKUqgUoMlKVtWCZ4IBH5PTje_Kde89-iCX1mtsGtVi13vJBBV5luURzDegdp33Dmu5cnap3LekIIc45TpOOWQlgcl1nFJE3cn2gPJaNbVTrbb-T8zLjJc5i9zlhsP47YdFJ7222Go01qEO0nT2n0s_Or-KLw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27175445</pqid></control><display><type>article</type><title>Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures</title><source>Elsevier</source><creator>Murata, M ; Tokuda, N ; Hojo, D ; Yamabe, K</creator><creatorcontrib>Murata, M ; Tokuda, N ; Hojo, D ; Yamabe, K</creatorcontrib><description>Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a case of 1.4-nm-thick SiO 2, even if a relationship between the leakage current distribution and the atomic step positions is not observed at the initial stage, the high voltage stress application makes the relationship clear. The atomic step edges have a great influence on their initial leakage and the reliability of the ultrathin oxide.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(02)00432-7</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Annealing ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Leakage current ; Microroughness ; Oxidation ; Oxide ; Physics ; Reliability ; Solid surfaces and solid-solid interfaces ; Surface conductivity and carrier phenomena ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Topography</subject><ispartof>Thin solid films, 2002-07, Vol.414 (1), p.56-62</ispartof><rights>2002 Elsevier Science B.V.</rights><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203</citedby><cites>FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=13843852$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Murata, M</creatorcontrib><creatorcontrib>Tokuda, N</creatorcontrib><creatorcontrib>Hojo, D</creatorcontrib><creatorcontrib>Yamabe, K</creatorcontrib><title>Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures</title><title>Thin solid films</title><description>Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a case of 1.4-nm-thick SiO 2, even if a relationship between the leakage current distribution and the atomic step positions is not observed at the initial stage, the high voltage stress application makes the relationship clear. The atomic step edges have a great influence on their initial leakage and the reliability of the ultrathin oxide.</description><subject>Annealing</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Leakage current</subject><subject>Microroughness</subject><subject>Oxidation</subject><subject>Oxide</subject><subject>Physics</subject><subject>Reliability</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface conductivity and carrier phenomena</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Topography</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwCUjZgGAROraTOFkhVPGSKrEA1pZrT6ghTYrt8Ph7nLaCJat56Nw7mkvIMYULCrSYPAJkkBZQwRmw8zhwloodMqKlqFImON0lo19knxx4_woAlDE-InKG6k29YKJ757ANibE-ODvvg-3axLZJ3wSnwiJ23Zc1mMStt43VQ-1drTQmnzYsEh9wNQno3LCJFr0OvUN_SPZq1Xg82tYxeb65fprepbOH2_vp1SzVvChDyuZiTtFAXnMUlaDUMJZTwIKZEnOqOBWgVV4ZU-iKUqgUoMlKVtWCZ4IBH5PTje_Kde89-iCX1mtsGtVi13vJBBV5luURzDegdp33Dmu5cnap3LekIIc45TpOOWQlgcl1nFJE3cn2gPJaNbVTrbb-T8zLjJc5i9zlhsP47YdFJ7222Go01qEO0nT2n0s_Or-KLw</recordid><startdate>20020701</startdate><enddate>20020701</enddate><creator>Murata, M</creator><creator>Tokuda, N</creator><creator>Hojo, D</creator><creator>Yamabe, K</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20020701</creationdate><title>Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures</title><author>Murata, M ; Tokuda, N ; Hojo, D ; Yamabe, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Annealing</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Leakage current</topic><topic>Microroughness</topic><topic>Oxidation</topic><topic>Oxide</topic><topic>Physics</topic><topic>Reliability</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface conductivity and carrier phenomena</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Murata, M</creatorcontrib><creatorcontrib>Tokuda, N</creatorcontrib><creatorcontrib>Hojo, D</creatorcontrib><creatorcontrib>Yamabe, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Murata, M</au><au>Tokuda, N</au><au>Hojo, D</au><au>Yamabe, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures</atitle><jtitle>Thin solid films</jtitle><date>2002-07-01</date><risdate>2002</risdate><volume>414</volume><issue>1</issue><spage>56</spage><epage>62</epage><pages>56-62</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Leakage current distribution in ultrathin SiO 2 film formed on (1 1 1) Si surface with step/terrace structures was investigated using atomic force microscopy with a conductive cantilever. Regions with higher leakage current of 1.0-nm-thick SiO 2 were observed in line along the atomic steps. In a case of 1.4-nm-thick SiO 2, even if a relationship between the leakage current distribution and the atomic step positions is not observed at the initial stage, the high voltage stress application makes the relationship clear. The atomic step edges have a great influence on their initial leakage and the reliability of the ultrathin oxide.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(02)00432-7</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0040-6090
ispartof Thin solid films, 2002-07, Vol.414 (1), p.56-62
issn 0040-6090
1879-2731
language eng
recordid cdi_proquest_miscellaneous_27175445
source Elsevier
subjects Annealing
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Leakage current
Microroughness
Oxidation
Oxide
Physics
Reliability
Solid surfaces and solid-solid interfaces
Surface conductivity and carrier phenomena
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Topography
title Leakage current distribution in ultrathin oxide on silicon surface with step/terrace structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T21%3A13%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Leakage%20current%20distribution%20in%20ultrathin%20oxide%20on%20silicon%20surface%20with%20step/terrace%20structures&rft.jtitle=Thin%20solid%20films&rft.au=Murata,%20M&rft.date=2002-07-01&rft.volume=414&rft.issue=1&rft.spage=56&rft.epage=62&rft.pages=56-62&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(02)00432-7&rft_dat=%3Cproquest_cross%3E27175445%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c368t-2b7b1ed05f3e79711d22510e62d8e51a3170ca59dd6c91109a0ed4829f7347203%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27175445&rft_id=info:pmid/&rfr_iscdi=true