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The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

A new plasma processing-based methodology for enhancing the streaming potential (V s) that may be obtained in electrokinetic flows for a given pressure gradient over a silicon surface-based microchannel is indicated. The dependence of the V s on both the surface zeta potential and the electrolyte sl...

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Published in:Langmuir 2022-10, Vol.38 (39), p.11837-11844
Main Authors: Cheng, Li, Fan, Bei, Zhang, Zichen, McLeod, Aaron, Shipley, Wade, Bandaru, Prabhakar
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Language:English
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cited_by cdi_FETCH-LOGICAL-a255t-d4a42a3ecff63ad13fb5519de22dbc7633e206d74af63fe31dc3cb84f9057f133
cites cdi_FETCH-LOGICAL-a255t-d4a42a3ecff63ad13fb5519de22dbc7633e206d74af63fe31dc3cb84f9057f133
container_end_page 11844
container_issue 39
container_start_page 11837
container_title Langmuir
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creator Cheng, Li
Fan, Bei
Zhang, Zichen
McLeod, Aaron
Shipley, Wade
Bandaru, Prabhakar
description A new plasma processing-based methodology for enhancing the streaming potential (V s) that may be obtained in electrokinetic flows for a given pressure gradient over a silicon surface-based microchannel is indicated. The dependence of the V s on both the surface zeta potential and the electrolyte slip length was carefully determined through a series of experiments involving the variation of CF4- and Ar-based plasma parameters, incorporating pressure, exposure time, and power. It was determined through analytical estimates that, while the zeta potential is always increased, the slip length may be diminished under certain conditions. A record value of ∼0.1 mV/Pa was obtained using CF4 plasma at 500 W, 10 mTorr, and 300 s of exposure. The implications of the work extend to the investigation of whether smooth surfaces may be effective for generating large V s’s for new modalities of electrical voltage sources in microfluidics-based applications.
doi_str_mv 10.1021/acs.langmuir.2c01168
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title The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing
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