Ultra low-power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless application

The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we...

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Bibliographic Details
Main Authors: Cidronali, A., Collodi, G., Camprini, M., Nair, V., Manes, G., Lewis, J., Goronkin, H.
Format: Conference Proceeding
Language:English
Subjects:
Energy consumption
HEMTs
Heterojunctions
MODFETs
Monolithic integrated circuits
Power generation
Semiconductor devices
Semiconductor diodes
Tunneling
Voltage-controlled oscillators
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Description
Summary:The monolithic integration of tunneling diodes (TDs) with other semiconductor devices such as HEMTs or HBTs, creates novel quantum functional nonlinear devices and circuits with unique properties: the Negative Differential Resistance (NDR) and the extremely low DC power consumption. In this paper we present an InP-HEMT/TD based voltage controlled oscillator operating in the 6 GHz band suitable for wireless applications. The circuit draws a current of 1.75 mA at 500 mV and generates an output power of -16 dBm. The maximum tuning range is 150 MHz and the single sideband-to-carrier ratio (SSCR) is of -105 dBc/Hz at 5 MHz.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2002.1011554