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Al( [formula omitted]) oxidation kinetics in the submonolayer regime; experiment and Monte Carlo simulations

In this letter we report Monte Carlo (MC) simulations of Al(1 1 1) oxidation based on a simple kinetic model. The latter involves the following sequence of elementary steps: (i) dissociation of impinging O 2 molecules via abstraction and normal dissociation, (ii) growth of chemisorbed O islands via...

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Bibliographic Details
Published in:Surface science 2002-06, Vol.512 (1), p.L325-L330
Main Authors: Oner, D.E., Ternow, H., Chakarova, R., Kasemo, B., Zorić, I.
Format: Article
Language:English
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Summary:In this letter we report Monte Carlo (MC) simulations of Al(1 1 1) oxidation based on a simple kinetic model. The latter involves the following sequence of elementary steps: (i) dissociation of impinging O 2 molecules via abstraction and normal dissociation, (ii) growth of chemisorbed O islands via normal dissociation at island edges and (iii) oxide formation at the edges involving O–Al place exchange. In the low coverage regime, the MC simulations yield predictions for O island size distributions in agreement with the experimental observations. Moreover, for the same choice of model parameters, the MC simulations predict an overall oxidation kinetics (sticking vs. coverage) in agreement with the experimental results also reported in this letter. The robustness of the model is examined for various choices of kinetic parameters.
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(02)01683-7