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Transmission through optically generated inductive grid arrays

A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 a...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1999-07, Vol.47 (7), p.1391-1397
Main Authors: Lockyer, D.S., Vardaxoglou, J.C., Kearney, M.J.
Format: Article
Language:English
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Summary:A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 and 40 GHz are presented. Measurements are performed on a silicon wafer illuminated by an external optical source via a negative image mask.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.775484