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Transmission through optically generated inductive grid arrays
A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 a...
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Published in: | IEEE transactions on microwave theory and techniques 1999-07, Vol.47 (7), p.1391-1397 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 and 40 GHz are presented. Measurements are performed on a silicon wafer illuminated by an external optical source via a negative image mask. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/22.775484 |