High power EUV sources based on gas discharge plasmas and laser produced plasmas

Recent results from the efforts of XTREME technologies in the development of high power EUV sources are presented in this paper. The third generation of a Z-pinch device is characterized in detail and demonstrates an EUV output power up to 7 W in-band in the usable angle of 0.2 sr. In 2 π sr this co...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2002-07, Vol.61, p.83-88
Main Authors: Schriever, G., Stamm, U., Gäbel, K., Darscht, M., Borisov, V., Khristoforov, O., Vinokhodov, A.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Recent results from the efforts of XTREME technologies in the development of high power EUV sources are presented in this paper. The third generation of a Z-pinch device is characterized in detail and demonstrates an EUV output power up to 7 W in-band in the usable angle of 0.2 sr. In 2 π sr this corresponds to an EUV output power at 13.5 nm wavelength in 2% bandwidth of above 200 W. First experiments with a laser produced plasma source show stability of the target system up to 250 kHz repetition rate and several kilowatts laser power within bursts. These basic experiments are essential for the future development of a high power laser produced plasma source using a liquid xenon jet target, which achieves high conversion efficiency and negligible debris emission.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00514-2