High power EUV sources based on gas discharge plasmas and laser produced plasmas

Recent results from the efforts of XTREME technologies in the development of high power EUV sources are presented in this paper. The third generation of a Z-pinch device is characterized in detail and demonstrates an EUV output power up to 7 W in-band in the usable angle of 0.2 sr. In 2 π sr this co...

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Published in:Microelectronic engineering 2002-07, Vol.61, p.83-88
Main Authors: Schriever, G., Stamm, U., Gäbel, K., Darscht, M., Borisov, V., Khristoforov, O., Vinokhodov, A.
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container_start_page 83
container_title Microelectronic engineering
container_volume 61
creator Schriever, G.
Stamm, U.
Gäbel, K.
Darscht, M.
Borisov, V.
Khristoforov, O.
Vinokhodov, A.
description Recent results from the efforts of XTREME technologies in the development of high power EUV sources are presented in this paper. The third generation of a Z-pinch device is characterized in detail and demonstrates an EUV output power up to 7 W in-band in the usable angle of 0.2 sr. In 2 π sr this corresponds to an EUV output power at 13.5 nm wavelength in 2% bandwidth of above 200 W. First experiments with a laser produced plasma source show stability of the target system up to 250 kHz repetition rate and several kilowatts laser power within bursts. These basic experiments are essential for the future development of a high power laser produced plasma source using a liquid xenon jet target, which achieves high conversion efficiency and negligible debris emission.
doi_str_mv 10.1016/S0167-9317(02)00514-2
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title High power EUV sources based on gas discharge plasmas and laser produced plasmas
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