Laser-Induced Rapid Growth of Tungsten Crystals

Laser-assisted deposition of tungsten by high-temperature decomposition of WF sub 6 , with only small amounts of H sub 2 present, has been studied. The kinetics of the process follows a different pathway than with standard chemical vapor deposition conditions, employing high H sub 2 partial pressure...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2002-02, Vol.5 (2), p.C25-C27, Article 25
Main Authors: Piglmayer, Klaus, Chabicovsky, Rupert
Format: Article
Language:English
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Summary:Laser-assisted deposition of tungsten by high-temperature decomposition of WF sub 6 , with only small amounts of H sub 2 present, has been studied. The kinetics of the process follows a different pathway than with standard chemical vapor deposition conditions, employing high H sub 2 partial pressures. The method allows rapid growth of single-crystal-like microtips with defined lateral borders, additionally self-termination of growth is achieved. (Sample substrate is silica.)
ISSN:1099-0062
1944-8775
DOI:10.1149/1.1430362