Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O sub(3) thin films

The deformation in the hysteresis loop of Pt/lead zirconate titanate (PZT)/Pt thin film capacitors was studied as a function of Zr/Ti ratios ranging from 60/40 to 20/80. The capacitors prepared by sputtering and reactive ion etching (RIE) of the top Pt layer were positively poled by d.c. plasma pote...

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Bibliographic Details
Published in:Journal of materials science letters 1999-01, Vol.18 (24), p.2025-2028
Main Authors: Lee, Eun Gu, Lee, Jong Kook, Kim, Ji-Young, Lee, Jae Gab, Jang, Hyun M, Kim, Sun Jae
Format: Article
Language:English
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Summary:The deformation in the hysteresis loop of Pt/lead zirconate titanate (PZT)/Pt thin film capacitors was studied as a function of Zr/Ti ratios ranging from 60/40 to 20/80. The capacitors prepared by sputtering and reactive ion etching (RIE) of the top Pt layer were positively poled by d.c. plasma potential during RIE of Pt. Deformations in the hysteresis loop such as a voltage shift, slant, and constriction were found to be due to space charges trapped at domain boundaries. Top electrode annealing below the Curie temperature accelerated the aging process. Trapped charges at domain boundaries were very stable and remained after annealing above the Curie temperature for 10 min.
ISSN:0261-8028