Implementation of RF power MOS in 0.18 mu m CMOS technology for single chip solution

This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18 mu m CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification t...

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Bibliographic Details
Main Authors: Hsu, Heng-Ming, Chen, Chih-Wei, Su, Jiong-Guang, Yeh, Ta-Hsun, Lin, Jason Chih-Hsien, Sun, Jack Yuan-Chen, Chen, Chun Hsiung
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18 mu m CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification testing is also included.
ISSN:0149-645X
DOI:10.1109/MWSYM.2002.1011808