Ammonia-free method for preparation of CdS nanocrystalline films by chemical bath deposition technique

The preparation of thin films of CdS by chemical bath deposition is mostly based on the utilisation of ammonia as a complexing agent for cadmium ions. Here we report on a new method based on potassium nitrilotriacetate that eliminates the problems of ammonia volatility and toxicity. We prepared high...

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Bibliographic Details
Published in:Thin solid films 2002-02, Vol.403, p.9-12
Main Authors: Nemec, P, Nemec, I, Nahalkova, P, Nemcova, Y, Trojanek, F, Maly, P
Format: Article
Language:English
Subjects:
CdS
Chemical bath deposition
Semiconductor nanocrystals
Thin solid films
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Summary:The preparation of thin films of CdS by chemical bath deposition is mostly based on the utilisation of ammonia as a complexing agent for cadmium ions. Here we report on a new method based on potassium nitrilotriacetate that eliminates the problems of ammonia volatility and toxicity. We prepared high quality films of closely packed nanocrystals with a thickness of up to 300 nm. The radius of the nanocrystals can be tuned from 2.6 to more than 10 nm by post-preparation heat treatment of the as-prepared films.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)01530-9