CHARACTERIZATION OF POLARITY OF WURTZITE GaN FILM GROWN BY MOLECULAR BEAM EPITAXY USING NH3

Effects of the initial nitridation of a sapphire(0001) substrate by NH3 on the polarity of GaN{0001} film have been investigated by coaxial impact collision ion scattering spectroscopy. The polarity of NH3 MBE film grown on the substrate nitrided using NH3 is assigned as (0001). The effect of the in...

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Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 3A/B, pp. L202-L204. 2000 Part 2. Vol. 39, no. 3A/B, pp. L202-L204. 2000, 2000-01, Vol.39 (3A/B), p.L202-L204
Main Authors: Sonoda, S, Shimizu, S, Shen, X-Q, Hara, S, Okumura, H
Format: Article
Language:English
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Summary:Effects of the initial nitridation of a sapphire(0001) substrate by NH3 on the polarity of GaN{0001} film have been investigated by coaxial impact collision ion scattering spectroscopy. The polarity of NH3 MBE film grown on the substrate nitrided using NH3 is assigned as (0001). The effect of the initial nitridation of the substrate by NH3 is contrary to that by N plasma, where the GaN film grown on the nitrided substrate shows the polarity of (000-1). The polarity of GaN film grown by rf plasma-assisted MBE on the substrate that is nitrided using NH3 is also (0001). These findings suggest the possibility of polarity control of the grown GaN film by choosing the N source for initial nitridation of the substrate. 19 refs.
ISSN:0021-4922
DOI:10.1143/jjap.39.l202