Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors

The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot ca...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 7A), p.4427-4431
Main Authors: Tsuchiya, Toshiaki, Yoshida, Toshiyuki, Sato, Yasuhiro
Format: Article
Language:English
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Summary:The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot carrier stress. The excess noise is suppressed in fully depleted MOSFETs after stress. However, it is not so suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, leading to instability in the Lorentzian-like excess low-frequency noise. 8 refs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.4427