Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors

The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot ca...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 7A), p.4427-4431
Main Authors: Tsuchiya, Toshiaki, Yoshida, Toshiyuki, Sato, Yasuhiro
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c412t-319ce4a93bf251a33170045756622a3f098274d084ea628bdc237018caefe5e93
cites
container_end_page 4431
container_issue Part 1, No. 7A
container_start_page 4427
container_title Japanese Journal of Applied Physics
container_volume 41
creator Tsuchiya, Toshiaki
Yoshida, Toshiyuki
Sato, Yasuhiro
description The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot carrier stress. The excess noise is suppressed in fully depleted MOSFETs after stress. However, it is not so suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, leading to instability in the Lorentzian-like excess low-frequency noise. 8 refs.
doi_str_mv 10.1143/JJAP.41.4427
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27215405</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27215405</sourcerecordid><originalsourceid>FETCH-LOGICAL-c412t-319ce4a93bf251a33170045756622a3f098274d084ea628bdc237018caefe5e93</originalsourceid><addsrcrecordid>eNotkd1KAzEQhYMoWKt3PkCuvDI1f_t3WUvXtlQrtF4vaXZWI7ubmmTRvosP6y4VBoZhvjmc4SB0y-iEMSkeVqvp60SyiZQ8OUMjJmRCJI2jczSilDMiM84v0ZX3n_0YR5KN0O-yOSgdsK3wwgY8U84ZcHgbHHiPbYvX9pvkDr46aPURv1jjAc8-lOuPwBkfjPbYtDivrQqmfSePtjziramNti3pa9n6rlbBOvwMQdV482NKwFtoBqDs9LDJDdQlmVcV9E52TrW-F7bOX6OLStUebv77GL3l891sQdabp-VsuiZaMh6IYJkGqTKxr3jElBAsoVRGSRTHnCtR0SzliSxpKkHFPN2XmouEslQrqCCCTIzR3Un34Gz_qA9FY7yGulYt2M4XPOEskjTqwfsTqJ313kFVHJxplDsWjBZDBMUQQSFZMUQg_gD4BXtO</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27215405</pqid></control><display><type>article</type><title>Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics</source><creator>Tsuchiya, Toshiaki ; Yoshida, Toshiyuki ; Sato, Yasuhiro</creator><creatorcontrib>Tsuchiya, Toshiaki ; Yoshida, Toshiyuki ; Sato, Yasuhiro</creatorcontrib><description>The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot carrier stress. The excess noise is suppressed in fully depleted MOSFETs after stress. However, it is not so suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, leading to instability in the Lorentzian-like excess low-frequency noise. 8 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.41.4427</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4427-4431</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-319ce4a93bf251a33170045756622a3f098274d084ea628bdc237018caefe5e93</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Tsuchiya, Toshiaki</creatorcontrib><creatorcontrib>Yoshida, Toshiyuki</creatorcontrib><creatorcontrib>Sato, Yasuhiro</creatorcontrib><title>Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors</title><title>Japanese Journal of Applied Physics</title><description>The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot carrier stress. The excess noise is suppressed in fully depleted MOSFETs after stress. However, it is not so suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, leading to instability in the Lorentzian-like excess low-frequency noise. 8 refs.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotkd1KAzEQhYMoWKt3PkCuvDI1f_t3WUvXtlQrtF4vaXZWI7ubmmTRvosP6y4VBoZhvjmc4SB0y-iEMSkeVqvp60SyiZQ8OUMjJmRCJI2jczSilDMiM84v0ZX3n_0YR5KN0O-yOSgdsK3wwgY8U84ZcHgbHHiPbYvX9pvkDr46aPURv1jjAc8-lOuPwBkfjPbYtDivrQqmfSePtjziramNti3pa9n6rlbBOvwMQdV482NKwFtoBqDs9LDJDdQlmVcV9E52TrW-F7bOX6OLStUebv77GL3l891sQdabp-VsuiZaMh6IYJkGqTKxr3jElBAsoVRGSRTHnCtR0SzliSxpKkHFPN2XmouEslQrqCCCTIzR3Un34Gz_qA9FY7yGulYt2M4XPOEskjTqwfsTqJ313kFVHJxplDsWjBZDBMUQQSFZMUQg_gD4BXtO</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Tsuchiya, Toshiaki</creator><creator>Yoshida, Toshiyuki</creator><creator>Sato, Yasuhiro</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>2002</creationdate><title>Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors</title><author>Tsuchiya, Toshiaki ; Yoshida, Toshiyuki ; Sato, Yasuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-319ce4a93bf251a33170045756622a3f098274d084ea628bdc237018caefe5e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsuchiya, Toshiaki</creatorcontrib><creatorcontrib>Yoshida, Toshiyuki</creatorcontrib><creatorcontrib>Sato, Yasuhiro</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsuchiya, Toshiaki</au><au>Yoshida, Toshiyuki</au><au>Sato, Yasuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2002</date><risdate>2002</risdate><volume>41</volume><issue>Part 1, No. 7A</issue><spage>4427</spage><epage>4431</epage><pages>4427-4431</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The impact of hot carrier stress on low-frequency noise features characteristic of floating-body Si-on-insulator (SOI) MOSFETs including fully and partially depleted MOSFETs is investigated. Lorentzian-like excess low-frequency noise, which appears in floating body SOI MOSFETs, is affected by hot carrier stress. The excess noise is suppressed in fully depleted MOSFETs after stress. However, it is not so suppressed in partially depleted MOSFETs, but the characteristic frequency in the excess noise spectrum shifts after stress. The mechanism of these phenomena is also discussed. Hot carrier stress causes interface-trap generation and leads to a decrease in the floating-body effect due to recombination of excess holes and electrons through the interface traps, leading to instability in the Lorentzian-like excess low-frequency noise. 8 refs.</abstract><doi>10.1143/JJAP.41.4427</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4427-4431
issn 0021-4922
1347-4065
language eng
recordid cdi_proquest_miscellaneous_27215405
source Institute of Physics IOPscience extra; Institute of Physics
title Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T22%3A24%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20Hot%20Carrier%20Stress%20on%20Low-Frequency%20Noise%20Characteristics%20in%20Floating-Body%20Silicon-on-Insulator%20Metal%20Oxide%20Semiconductor%20Field-Effect%20Transistors&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Tsuchiya,%20Toshiaki&rft.date=2002&rft.volume=41&rft.issue=Part%201,%20No.%207A&rft.spage=4427&rft.epage=4431&rft.pages=4427-4431&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.41.4427&rft_dat=%3Cproquest_cross%3E27215405%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c412t-319ce4a93bf251a33170045756622a3f098274d084ea628bdc237018caefe5e93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27215405&rft_id=info:pmid/&rfr_iscdi=true