Comprehensive study of a new self-convergent programming scheme for split gate flash memory

A new self-convergent constant current programming achieved by a ramp-up source voltage is extensively studied in this work. Based on the results of a constant programming current and self-convergent characteristics, several methods are presented to achieve accurate control of multiple programmed st...

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Bibliographic Details
Published in:JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP 2000-01, Vol.39 (5 B), p.2219-2222
Main Authors: Chou, Amy Hsiu-Fen, Wong, Wei-Zhe, Yang, Evans Ching-Song, Yao, Yu-Yuan, Wang, Yen-Sen, King, Ya-Chin, Hsu, Charles Ching-Hsiang
Format: Article
Language:English
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Summary:A new self-convergent constant current programming achieved by a ramp-up source voltage is extensively studied in this work. Based on the results of a constant programming current and self-convergent characteristics, several methods are presented to achieve accurate control of multiple programmed states. Both efficient programming speed and excellent reliability are demonstrated. The proposed programming technique is considered to be a promising candidate for high-speed, high-density, and low-power multilevel split gate flash memory.
ISSN:0021-4922