CVD Growth of Boron Nitride Nanotubes

We describe BN-nanotube growth by chemical vapor deposition (CVD) using the precursor borazine (B sub 3 N sub 3 H sub 6 ), which is generated in situ. Multiwalled BN nanotubes are observed to form in dense thickets on and about nickel boride catalyst particles at approx =1100 deg C. The BN nanotubes...

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Bibliographic Details
Published in:Chemistry of materials 2000-07, Vol.12 (7), p.1808-1810
Main Authors: Lourie, Oleg R, Jones, Carolyn R, Bartlett, Bart M, Gibbons, Patrick C, Ruoff, Rodney S, Buhro, William E
Format: Article
Language:English
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Summary:We describe BN-nanotube growth by chemical vapor deposition (CVD) using the precursor borazine (B sub 3 N sub 3 H sub 6 ), which is generated in situ. Multiwalled BN nanotubes are observed to form in dense thickets on and about nickel boride catalyst particles at approx =1100 deg C. The BN nanotubes resemble those grown by the higher temperature arc-discharge and laser-ablation methods, except for a preponderance of bulbous, club-like, and flag-like tip closures, which to our knowledge have been observed in only one prior study. The results suggest a root-growth mechanism in which the nanotubes are extended by BN addition at their roots, where the nanotubes are attached to the catalyst particles.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm000157q