Interface characteristics of selective tungsten on silicon using a new pretreatment technology for ULSI application

• Published in: IEEE transactions on electron devices 1997-05, Vol.44 (5), p.738-743
• Main Authors: Chang, K-M, Yeh, T-H, Wang, Sh-W, Li, Ch-H, Tsai, J-Y, Yang, J-Y
• Format: Article
• Language: English
• Subjects: Etching; Hafnium; Plasma applications; Plasma properties; Semiconductor films; Silicon; Substrates; Surface contamination; Surface morphology; Tungsten
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.568034

The characteristics of selective tungsten film on silicon strongly depend on the surface properties of the underlying substrate. In this work, a new pretreatment process prior to selective tungsten film deposition has been developed. A CF/sub 4//O/sub 2/ mixed plasma modification procedure and a subsequent O/sub 2/ plasma ashing step combine to achieve efficient surface precleaning. The damage and contamination induced by reactive ion etching (RIE) are thus eliminated. Concurrently, a subsequent anhydrous HF cleaning was used to remove the native oxide on silicon as well as to obtain a fluorine-passivated silicon surface which can avoid reoxidation during the transport of wafers. This new pretreatment technology produces tungsten films that retain superior physical properties within the aspects of deposition rate, film morphology, and selectivity. Also, excellent interface characteristics with low silicon consumption, low contact resistance, low contact leakage current, and fewer impurities of fluorine, oxygen, and carbon within the interfacial region are obtained.