A new fabrication process for metallic point contacts

We present a new process to fabricate metallic point contacts. The key feature of this process is the use of a Si membrane. Advantages of the process are i) the possibility to fabricate very small holes (down to 10 nm diameter), while the lithographic resolution requirements are modest, ii) the poss...

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Bibliographic Details
Published in:Microelectronic engineering 1997-02, Vol.35 (1-4), p.317-320
Main Authors: Gribov, N.N., Theeuwen, S.J.C.H., Caro, J., Radelaar, S.
Format: Article
Language:English
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Summary:We present a new process to fabricate metallic point contacts. The key feature of this process is the use of a Si membrane. Advantages of the process are i) the possibility to fabricate very small holes (down to 10 nm diameter), while the lithographic resolution requirements are modest, ii) the possibility to fine-tune the size of the hole by thermal oxidation and iii) probably a better controlled filling of the hole due to its tapered shape and its sharp edge. From electrical transport measurements it follows that the process yields highly ballistic point contacts.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(96)00141-4