Photosensitivity of silicon–porous silicon heterostructures

The photosensitivity of silicon–porous silicon heterostructures has been studied. The measured photocurrent intensity as a function of photon energy showed oscillations in both polarized and unpolarized light. Assuming that photocurrent oscillations were due to light interference in thin porous sili...

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Bibliographic Details
Published in:Thin solid films 1997-04, Vol.297 (1), p.129-131
Main Authors: Astrova, E.V, Lebedev, A.A, Remenyuk, A.D, Rud', V.Yu, Rud', Yu.V
Format: Article
Language:English
Subjects:
Heterostructure
Photosensitivity oscillations
Polarization
Porous silicon
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Summary:The photosensitivity of silicon–porous silicon heterostructures has been studied. The measured photocurrent intensity as a function of photon energy showed oscillations in both polarized and unpolarized light. Assuming that photocurrent oscillations were due to light interference in thin porous silicon layers, the refractive index was estimated as 1.6–1.8. At normal light incidence there was no effect of the direction of light polarization, but at oblique light incidence the photocurrent when the light electrical vector coincided with the incidence plane exceeded that at perpendicular polarization, due to a difference in reflectivity.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(96)09531-4