n-ZnSe/p-GaAs heterojunction solar cells

For PV applications epitaxial layers of n-ZnSe were grown by metal-organic vapour phase epitaxy (MOVPE) at 340 degree C on GaAs(001) substrates. n-type net carrier concentration in the range between 10 super(17)-10 super(19) cm super(-3) was demonstrated. By increasing the doping concentration the d...

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Bibliographic Details
Main Authors: Blieske, U., Kampschulte, T., Bauknecht, A., Saad, M., Sollner, J., Krost, A., Schatke, K., Lux-Steiner, M.Ch
Format: Conference Proceeding
Language:English
Subjects:
Doping
Epitaxial growth
Epitaxial layers
Gallium arsenide
Heterojunctions
Photovoltaic cells
Short circuit currents
Substrates
Voltage
X-ray diffraction
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Summary:For PV applications epitaxial layers of n-ZnSe were grown by metal-organic vapour phase epitaxy (MOVPE) at 340 degree C on GaAs(001) substrates. n-type net carrier concentration in the range between 10 super(17)-10 super(19) cm super(-3) was demonstrated. By increasing the doping concentration the double crystal x-ray diffraction full width at half maximum of 1.2 mu m thick ZnSe-layers increased from 400 inches to 600 inches. A first n-ZnSe/p-GaAs solar cell achieved an open circuit voltage of 706 mV, a fill factor of 65% and a short circuit current density of 10 mAcm super(-2) (total area, ELH-lamp, 100 mWcm super(-2), no AR-coating). J sub(sc) was increased by 4 mAcm super(-2) by depositing sputtered n super(+)-ZnO on the n-ZnSe layer. In order to further improve the PV performance n-ZnSe will be grown on GaAs buffer layers, the doping profile will be optimized systematically and MgF sub(2) will be deposited on the ZnO layer.
ISSN:0160-8371
DOI:10.1109/PVSC.1997.654242