Photoemisison of Ge(110) at room and high temperature

Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temperature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at approx8...

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Bibliographic Details
Published in:Surface science 1997-09, Vol.402-404 (1-3), p.875-879
Main Authors: Sancrotti, M, Laine, A D, Cepek, C, Goldoni, A, Vandre, S, DeSeta, M, Franco, N, Avila, J, Asensio, M C
Format: Article
Language:English
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Summary:Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temperature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at approx800K, at which temperature, the centroids of the core level spectra start to move to a lower binding energy, and their widths start to increase more quickly.
ISSN:0039-6028