Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process

Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron do...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994, Vol.33 (12B), p.L1751-L1754
Main Authors: YAMAMOTO, K, NAKASHIMA, A, SUZUKI, T, YOSHIMI, M, NISHIO, H, IZUMINA, M
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as low as 2×10 -4 Ω·cm. The structure of the solar cell presented here is ITO/n µc-Si:H (30 nm)/p poly-Si (2 µm)/p + poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness ( 2 µm) of the solar cell.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.33.L1751