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Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process
Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron do...
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| Published in: | Japanese Journal of Applied Physics 1994, Vol.33 (12B), p.L1751-L1754 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c460t-3c95f2e94b217ef8f7fd211445bbec5f78a8fc0e9ba08f6e5b49a274cb64faae3 |
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| container_end_page | L1754 |
| container_issue | 12B |
| container_start_page | L1751 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | YAMAMOTO, K NAKASHIMA, A SUZUKI, T YOSHIMI, M NISHIO, H IZUMINA, M |
| description | Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as low as 2×10
-4
Ω·cm. The structure of the solar cell presented here is ITO/n µc-Si:H (30 nm)/p poly-Si (2 µm)/p
+
poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness ( 2 µm) of the solar cell. |
| doi_str_mv | 10.1143/jjap.33.L1751 |
| format | article |
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-4
Ω·cm. The structure of the solar cell presented here is ITO/n µc-Si:H (30 nm)/p poly-Si (2 µm)/p
+
poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness ( 2 µm) of the solar cell.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.L1751</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Energy ; Exact sciences and technology ; Natural energy ; Photovoltaic conversion ; Solar cells. Photoelectrochemical cells ; Solar energy</subject><ispartof>Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.L1751-L1754</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c460t-3c95f2e94b217ef8f7fd211445bbec5f78a8fc0e9ba08f6e5b49a274cb64faae3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3387002$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YAMAMOTO, K</creatorcontrib><creatorcontrib>NAKASHIMA, A</creatorcontrib><creatorcontrib>SUZUKI, T</creatorcontrib><creatorcontrib>YOSHIMI, M</creatorcontrib><creatorcontrib>NISHIO, H</creatorcontrib><creatorcontrib>IZUMINA, M</creatorcontrib><title>Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process</title><title>Japanese Journal of Applied Physics</title><description>Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as low as 2×10
-4
Ω·cm. The structure of the solar cell presented here is ITO/n µc-Si:H (30 nm)/p poly-Si (2 µm)/p
+
poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness ( 2 µm) of the solar cell.</description><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9kElLA0EQhRtRMEaP3vsg3iZOL7MdQ3ALAQXjeajuVJsJPYtdE2X-vRMNnqoKvveK9xi7FvFMCK3udjvoZkrNViJLxAmbCKWzSMdpcsomcSxFpAspz9kF0W4800SLCduut1UTucrXvGv9YMNAPXhfNcjfKk6th8Ates_bhn94IOK0N9QH6JE7MKGy47bhZuDAm_YLPfftN--x7nBk9gF5F1qLRJfszIEnvDrOKXt_uF8vnqLVy-PzYr6KrE7jPlK2SJzEQhspMnS5y9xGjul0YgzaxGU55M7GWBiIc5diYnQBMtPWpNoBoJqy2z_f8e_nHqkv64oOCaDBdk-lzGSeKJmOYPQH2tASBXRlF6oawlCKuDz0WS6X89dSqfK3z5G_ORoDWfAuQGMr-hcplWdjq-oHK_t4ZQ</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>YAMAMOTO, K</creator><creator>NAKASHIMA, A</creator><creator>SUZUKI, T</creator><creator>YOSHIMI, M</creator><creator>NISHIO, H</creator><creator>IZUMINA, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>1994</creationdate><title>Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process</title><author>YAMAMOTO, K ; NAKASHIMA, A ; SUZUKI, T ; YOSHIMI, M ; NISHIO, H ; IZUMINA, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c460t-3c95f2e94b217ef8f7fd211445bbec5f78a8fc0e9ba08f6e5b49a274cb64faae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO, K</creatorcontrib><creatorcontrib>NAKASHIMA, A</creatorcontrib><creatorcontrib>SUZUKI, T</creatorcontrib><creatorcontrib>YOSHIMI, M</creatorcontrib><creatorcontrib>NISHIO, H</creatorcontrib><creatorcontrib>IZUMINA, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAMAMOTO, K</au><au>NAKASHIMA, A</au><au>SUZUKI, T</au><au>YOSHIMI, M</au><au>NISHIO, H</au><au>IZUMINA, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994</date><risdate>1994</risdate><volume>33</volume><issue>12B</issue><spage>L1751</spage><epage>L1754</epage><pages>L1751-L1754</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the heavily boron doped laser annealed polycrystalline Si film is as low as 2×10
-4
Ω·cm. The structure of the solar cell presented here is ITO/n µc-Si:H (30 nm)/p poly-Si (2 µm)/p
+
poly-Si (300 nm)/glass substrate, which shows reasonably high current density despite the low-temperature fabrication. The effective diffusion length of this solar cell estimated from the evaluation of the inverse quantum efficiency is more than or equal to the thickness ( 2 µm) of the solar cell.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.L1751</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994, Vol.33 (12B), p.L1751-L1754 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27285326 |
| source | Institute of Physics IOPscience extra; Institute of Physics |
| subjects | Applied sciences Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy |
| title | Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process |
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