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Dynamically electrical/thermal-tunable perfect absorber for a high-performance terahertz modulation

We present a high-performance functional perfect absorber in a wide range of terahertz (THz) wave based on a hybrid structure of graphene and vanadium dioxide (VO 2 ) resonators. Dynamically electrical and thermal tunable absorption is achieved due to the management on the resonant properties via th...

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Bibliographic Details
Published in:Optics express 2022-10, Vol.30 (22), p.39736-39746
Main Authors: Zeng, Dongwen, Zong, Shu, Liu, Guiqiang, Yuan, Wen, Liu, Xiaoshan, Liu, Zhengqi
Format: Article
Language:English
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Summary:We present a high-performance functional perfect absorber in a wide range of terahertz (THz) wave based on a hybrid structure of graphene and vanadium dioxide (VO 2 ) resonators. Dynamically electrical and thermal tunable absorption is achieved due to the management on the resonant properties via the external surroundings. Multifunctional manipulations can be further realized within such absorber platform. For instance, a wide-frequency terahertz perfect absorber with the operation frequency range covering from 1.594 THz to 3.272 THz can be realized when the conductivity of VO 2 is set to 100000 S/m (metal phase) and the Fermi level of graphene is 0.01 eV. The absorption can be dynamically changed from 0 to 99.98% and in verse by adjusting the conductivity of VO 2 . The impedance matching theory is introduced to analyze and elucidate the wideband absorption rate. In addition, the absorber can be changed from wideband absorption to dual-band absorption by adjusting the Fermi level of graphene from 0.01 eV to 0.7 eV when the conductivity of VO 2 is fixed at 100000 S/m. Besides, the analysis of the chiral characteristics of the helical structure shows that the extinction cross-section has a circular dichroic response under the excitation of two different circularly polarized lights (CPL). Our study proposes approaches to manipulate the wide-band terahertz wave with multiple ways, paving the way for the development of technologies in the fields of switches, modulators, and imaging devices.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.474970