Proposed mechanism for the improvements of PZT thin films deposited by direct-current glow discharge assisted laser ablation

Ferroelectric thin films of Pb(Zr,Ti)O 3 (PZT) were fabricated on platinum coated silicon using the process of direct-current glow discharge assisted laser ablation. This process improved the crystallinity and ferroelectric behavior of the films. The c-axis oriented PZT films were obtained when depo...

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Bibliographic Details
Published in:Ferroelectrics 1997-05, Vol.195 (1), p.203-206
Main Authors: Zheng, Lirong, Lin, Chenglu, Xu, W-Ping, Song, Shigeng, Zou, Shichang, Ma, T. P.
Format: Article
Language:English
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Summary:Ferroelectric thin films of Pb(Zr,Ti)O 3 (PZT) were fabricated on platinum coated silicon using the process of direct-current glow discharge assisted laser ablation. This process improved the crystallinity and ferroelectric behavior of the films. The c-axis oriented PZT films were obtained when deposited at 730°C with +800v discharge voltage. A possible mechanism for the improvement of the deposition process has been proposed
ISSN:0015-0193
1563-5112
DOI:10.1080/00150199708260521