Porous silicon as low-dimensional host material for erbium-doped structures

• Published in: Thin solid films 1997-04, Vol.297 (1), p.48-52
• Main Authors: Bondarenko, V., Dolgyi, L., Dorofeev, A., Kazuchits, N., Leshok, A., Troyanova, G., Vorozov, N., Maiello, G., Masini, G., La Monica, S., Ferrari, A.
• Format: Article
• Language: English
• Subjects: Erbium; Host material; Silicon
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(96)09429-1

A low-dimensional matrix of porous silicon (PS) was found to be an effective host material for erbium (Er) electrodeposition from Er(NO 3) 3·5H 2O/ethanol solution. After thermal annealing at 850–1200 °C in an O 2-containing atmosphere, such material exhibited sharp 1.54 μm luminescence at 77 K and 300 K. In contrast to previous studies, strong Er-related photoluminescence (PL) was found not only in the case of red-emitting PS formed in initial p-Si(111) wafers of 0.3 Ω cm resistivity but also for micro-sized material formed in initial 0.01 Ω cm n +-Si(111). Erbium doping of p-type PS resulted in a 1.54 μm peak appearance in addition to two broad PL bands at about 1.3 μm and 0.8–0.9 μm. In contrast, n +-type PS:Er exhibited only a sharp 1.54 μm peak without other PL bands. The intensity of the Er-related peak depended strongly on the Si anodization regime and increased with the PS thickness growth from 1 to 20 μm. Application aspects of PS:Er for light-emitting devices and integrated optical waveguides are discussed. © 1997 Elsevier Science S.A.