A 60-GHz MMIC-compatible TED-oscillator

Experimental results achieved with planar GaAs transferred electron oscillators at V-band frequencies are reported in this contribution. The active devices are MESFET-like structures with a Schottky-gate controlling the electron injection into the drift region. The electron injection is adjusted to...

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1995-04, Vol.5 (4), p.114-116
Main Authors: Springer, A.L., Diskus, C.G., Lubke, K., Thim, H.W.
Format: Article
Language:English
Subjects:
Electrical resistance measurement
Electrons
Frequency
Gallium arsenide
MESFETs
Millimeter wave measurements
Millimeter wave transistors
Oscillators
Power generation
Power measurement
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Summary:Experimental results achieved with planar GaAs transferred electron oscillators at V-band frequencies are reported in this contribution. The active devices are MESFET-like structures with a Schottky-gate controlling the electron injection into the drift region. The electron injection is adjusted to a level yielding a frequency independent negative differential resistance which is exploited for millimeter-wave power generation. The highest measured CW output power and efficiency are 6.72 mW and 1.3% at 60.33 GHz, respectively. These results are comparable to those obtained with transistor oscillators which are much more difficult to fabricate due to their extremely small dimensions in the 0.1 μm range.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.372809