Pattern formation in Pt-SiC diffusion couples

The morphology of reaction zones between platinum metal and silicon carbide ceramic at 973 and 1023 K is considered in detail. A periodic pattern of carbon bands embedded in Pt 7Si 3 is observed at both temperatures. The growth of platinum silicides at 973 and 1023 K is compared. Cross-sections of t...

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Bibliographic Details
Published in:Solid state ionics 1997-02, Vol.95 (1), p.51-59
Main Authors: Rijnders, M.R., Kodentsov, A.A., van Beek, J.A., van den Akker, J., van Loo, F.J.J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Diffusion couples
Diffusion
interface formation
Exact sciences and technology
Metal/ceramic joint
Pattern formation
Physics
Silicon carbide
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The morphology of reaction zones between platinum metal and silicon carbide ceramic at 973 and 1023 K is considered in detail. A periodic pattern of carbon bands embedded in Pt 7Si 3 is observed at both temperatures. The growth of platinum silicides at 973 and 1023 K is compared. Cross-sections of the Pt-Si-C phase diagram at those temperatures are presented. The periodic layered morphology is explained via a ‘repeated splitting’ mechanism.
ISSN:0167-2738
1872-7689
DOI:10.1016/S0167-2738(96)00578-4