Chemical vapor deposition of (Ba, Sr)TiO3

• Published in: Journal of the Electrochemical Society 1995, Vol.142 (1), p.244-248
• Main Authors: YOSHIDA, M, YAMAGUCHI, H, SAKUMA, T, MIYASAKA, Y, LESAICHERRE, P.-Y, ISHITANI, A
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2043883

SrTiO3 and (Ba,Sr)TiO3 thin films were fabricated on Si and Pt /TaOx/Si substrates by chemical vapour deposition (CVD) using Sr(DPM)2, Ba(DPM)2, Ti(O-iC3H7)4, and O2 where DPM is dipivaloylmethanate or formally 2,2,6,6-tetramethyl-3,5-heptanedionate. The deposition system was operated in both thermal CVD mode and electron cyclotron resonance (ECR) plasma CVD Mode. Variations in individual Sr and Ti deposition rates with differing deposition conditions were investigated. The SrTiO3 and (Ba,Sr)TiO3 films were characterised with a view to discussing the step-coverage, crystal structure, and electrical properties. The step-coverage over the 300 nm wide SiO2 lines, with 500 nm height and 500 nm spacing, was 30 to 40%. The 40 to 100 nm SrTiO3 films, through the postdeposition annealing process, showed dielectric constants greater than 140 with a leakage current density level less than 10 exp(-7) A/cm2 at 1 V. The prospects for applying the CVD (Ba,Sr)TiO3 films to giga-bit dynamic random access memory storage capacitors are discussed. 7 refs.