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Characterization of SiC whiskers
The composition and microstructure of SiC whiskers from three different suppliers were studied to understand their physical and chemical properties. The following analytical methods were utilized: complete chemical analysis, morphological examination by scanning electron microscopy and by high-resol...
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Published in: | Journal of materials science 1995-01, Vol.30 (14), p.3734-3745 |
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container_end_page | 3745 |
container_issue | 14 |
container_start_page | 3734 |
container_title | Journal of materials science |
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creator | FREVEL, L. K SAHA, C. K PETERSEN, D. R |
description | The composition and microstructure of SiC whiskers from three different suppliers were studied to understand their physical and chemical properties. The following analytical methods were utilized: complete chemical analysis, morphological examination by scanning electron microscopy and by high-resolution transmission electron microscopy, selected-area electron diffraction, x-ray diffraction, and thermogravimetric analysis of the oxidation rate of the three SiC whiskers at 1050 deg C in oxygen and at 1150 deg C in air. |
doi_str_mv | 10.1007/BF00351892 |
format | article |
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subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Whiskers and dendrites (growth,structure, and nonelectronic properties) |
title | Characterization of SiC whiskers |
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