Si/C phases from the IR laser-induced decomposition of 1,4-disilabutane

Hydrogenated amorphous Si1-xCx materials, prepared by CVD via conventional pyrolysis, photolysis or plasma-assisted decomposition of volatile precursors, are of interest in photovoltaic and optoelectronic applications and in high-temperature ceramics. The properties of Si/C films can be improved by...

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Published in:Journal of materials chemistry 1997, Vol.7 (4), p.637-640
Main Authors: Volnina, Elvira A., Kupčík, Jaroslav, Bastl, Zdeněk, Šubrt, Jan, Gusel’nikov, Leonid E., Pola, Josef
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container_end_page 640
container_issue 4
container_start_page 637
container_title Journal of materials chemistry
container_volume 7
creator Volnina, Elvira A.
Kupčík, Jaroslav
Bastl, Zdeněk
Šubrt, Jan
Gusel’nikov, Leonid E.
Pola, Josef
description Hydrogenated amorphous Si1-xCx materials, prepared by CVD via conventional pyrolysis, photolysis or plasma-assisted decomposition of volatile precursors, are of interest in photovoltaic and optoelectronic applications and in high-temperature ceramics. The properties of Si/C films can be improved by the choice of the CVD conditions and by using specially designed hydridocarbosilanes which offer better control of the Si/C stoichiometry and lower deposition temperatures. The potential of alpha,omega-disilaalkanes as suitable precursors has not yet been assessed. The laser-induced decomposition of 1,4-disilabutane (DSB), and the properties of the Si/C phases deposited, was studied. CO2 laser-induced decomposition of DSB in the gas phase yields gaseous C1-2 hydrocarbons and RSiH3 compounds (R = H, CH3, C2H5 and C2H3). The method represents a convenient process for CVD of thin films composed of Si/C/H, Si/C and Si components. 43 refs.
doi_str_mv 10.1039/a606524d
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title Si/C phases from the IR laser-induced decomposition of 1,4-disilabutane
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