Cryogenically cooled performance of a monolithic 44-GHz InP-based HEMT low-noise amplifier

A monolithic 44-GHz low-noise amplifier using 0.1-μm pseudomorphic InAlAs/InGaAs/InP HEMT technology and its cryogenically cooled performance are reported. This single-stage MMIC amplifier has a measured noise figure of 2.5 dB with an associated gain of 8 dB at 44.5 GHz with 5-mW dc power consumptio...

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1995-09, Vol.5 (9), p.281-283, Article 281
Main Authors: Wang, Huei, Lo, D.C.-W., Lai, R., Cheng-Chih Yang, Berenz, J.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
Low-noise amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MMICs
Noise figure
Noise reduction
Power amplifiers
Temperature
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Summary:A monolithic 44-GHz low-noise amplifier using 0.1-μm pseudomorphic InAlAs/InGaAs/InP HEMT technology and its cryogenically cooled performance are reported. This single-stage MMIC amplifier has a measured noise figure of 2.5 dB with an associated gain of 8 dB at 44.5 GHz with 5-mW dc power consumption at room temperature. The noise temperature of this MMIC LNA decreases to 29 K (0.4-dB noise figure) and the associated gain increases to 10.3 dB when it is cooled down to 80 K under the same bias condition, which corresponds to an average noise temperature reduction slope of 0.9 and a gain increase slope of 0.01 dB//spl deg/K. To our knowledge, this is the first reported cryogenically cooled noise performance of a monolithic amplifier at this frequency.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.410397