Spectral response of InP/Si solar cells irradiated to high proton fluences

InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase a...

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Main Authors: Messenger, S.R., Xapsos, M.A., Walters, R.J., Cotal, H.L., Wojtczuk, S.J., Serreze, H.B., Summers, G.P.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance-voltage characteristics
Current measurement
Extraterrestrial measurements
Failure analysis
Indium phosphide
Laboratories
Photovoltaic cells
Protons
Silicon
Space technology
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creator Messenger, S.R.
Xapsos, M.A.
Walters, R.J.
Cotal, H.L.
Wojtczuk, S.J.
Serreze, H.B.
Summers, G.P.
description InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented.
doi_str_mv 10.1109/PVSC.1997.654256
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fullrecord <record><control><sourceid>proquest_CHZPO</sourceid><recordid>TN_cdi_proquest_miscellaneous_27344747</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>654256</ieee_id><sourcerecordid>27344747</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-b6852c490da5584ff6d435dc88a0c763a7bd4c5aa28e03e8767da49aae2e91df3</originalsourceid><addsrcrecordid>eNotUEtLAzEYDKhgrb2Lp5y8bZtsnnuU4qNSsFD1unxNvrWR7WZNtgf_vSsVBuYyzIuQG87mnLNqsfnYLue8qsxcK1kqfUZmlbFshBBGG35OJoxrVlhh-CW5yvmLsZIJzSfkZdujGxK0NGHuY5eRxoauus1iG2iOLSTqsG0zDSmBDzCgp0Ok-_C5p32KQ-xo0x6xc5ivyUUDbcbZP0_J--PD2_K5WL8-rZb36yKMmUOx01aVTlbMg1JWNo32UijvrAXmjBZgdl46BVBaZALtOMCDrACwxIr7RkzJ3cl3zP8-Yh7qQ8h_JaHDeMx1aYSURppReHsSBkSs-xQOkH7q00XiF3WxWpk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>27344747</pqid></control><display><type>conference_proceeding</type><title>Spectral response of InP/Si solar cells irradiated to high proton fluences</title><source>IEEE Xplore All Conference Series</source><creator>Messenger, S.R. ; Xapsos, M.A. ; Walters, R.J. ; Cotal, H.L. ; Wojtczuk, S.J. ; Serreze, H.B. ; Summers, G.P.</creator><creatorcontrib>Messenger, S.R. ; Xapsos, M.A. ; Walters, R.J. ; Cotal, H.L. ; Wojtczuk, S.J. ; Serreze, H.B. ; Summers, G.P.</creatorcontrib><description>InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9780780337671</identifier><identifier>ISBN: 0780337670</identifier><identifier>DOI: 10.1109/PVSC.1997.654256</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance-voltage characteristics ; Current measurement ; Extraterrestrial measurements ; Failure analysis ; Indium phosphide ; Laboratories ; Photovoltaic cells ; Protons ; Silicon ; Space technology</subject><ispartof>Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997, 1997, p.995-998</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/654256$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,2058,4050,4051,27924,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/654256$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Messenger, S.R.</creatorcontrib><creatorcontrib>Xapsos, M.A.</creatorcontrib><creatorcontrib>Walters, R.J.</creatorcontrib><creatorcontrib>Cotal, H.L.</creatorcontrib><creatorcontrib>Wojtczuk, S.J.</creatorcontrib><creatorcontrib>Serreze, H.B.</creatorcontrib><creatorcontrib>Summers, G.P.</creatorcontrib><title>Spectral response of InP/Si solar cells irradiated to high proton fluences</title><title>Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997</title><addtitle>PVSC</addtitle><description>InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented.</description><subject>Capacitance-voltage characteristics</subject><subject>Current measurement</subject><subject>Extraterrestrial measurements</subject><subject>Failure analysis</subject><subject>Indium phosphide</subject><subject>Laboratories</subject><subject>Photovoltaic cells</subject><subject>Protons</subject><subject>Silicon</subject><subject>Space technology</subject><issn>0160-8371</issn><isbn>9780780337671</isbn><isbn>0780337670</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUEtLAzEYDKhgrb2Lp5y8bZtsnnuU4qNSsFD1unxNvrWR7WZNtgf_vSsVBuYyzIuQG87mnLNqsfnYLue8qsxcK1kqfUZmlbFshBBGG35OJoxrVlhh-CW5yvmLsZIJzSfkZdujGxK0NGHuY5eRxoauus1iG2iOLSTqsG0zDSmBDzCgp0Ok-_C5p32KQ-xo0x6xc5ivyUUDbcbZP0_J--PD2_K5WL8-rZb36yKMmUOx01aVTlbMg1JWNo32UijvrAXmjBZgdl46BVBaZALtOMCDrACwxIr7RkzJ3cl3zP8-Yh7qQ8h_JaHDeMx1aYSURppReHsSBkSs-xQOkH7q00XiF3WxWpk</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Messenger, S.R.</creator><creator>Xapsos, M.A.</creator><creator>Walters, R.J.</creator><creator>Cotal, H.L.</creator><creator>Wojtczuk, S.J.</creator><creator>Serreze, H.B.</creator><creator>Summers, G.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1997</creationdate><title>Spectral response of InP/Si solar cells irradiated to high proton fluences</title><author>Messenger, S.R. ; Xapsos, M.A. ; Walters, R.J. ; Cotal, H.L. ; Wojtczuk, S.J. ; Serreze, H.B. ; Summers, G.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-b6852c490da5584ff6d435dc88a0c763a7bd4c5aa28e03e8767da49aae2e91df3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Capacitance-voltage characteristics</topic><topic>Current measurement</topic><topic>Extraterrestrial measurements</topic><topic>Failure analysis</topic><topic>Indium phosphide</topic><topic>Laboratories</topic><topic>Photovoltaic cells</topic><topic>Protons</topic><topic>Silicon</topic><topic>Space technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Messenger, S.R.</creatorcontrib><creatorcontrib>Xapsos, M.A.</creatorcontrib><creatorcontrib>Walters, R.J.</creatorcontrib><creatorcontrib>Cotal, H.L.</creatorcontrib><creatorcontrib>Wojtczuk, S.J.</creatorcontrib><creatorcontrib>Serreze, H.B.</creatorcontrib><creatorcontrib>Summers, G.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Messenger, S.R.</au><au>Xapsos, M.A.</au><au>Walters, R.J.</au><au>Cotal, H.L.</au><au>Wojtczuk, S.J.</au><au>Serreze, H.B.</au><au>Summers, G.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Spectral response of InP/Si solar cells irradiated to high proton fluences</atitle><btitle>Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997</btitle><stitle>PVSC</stitle><date>1997</date><risdate>1997</risdate><spage>995</spage><epage>998</epage><pages>995-998</pages><issn>0160-8371</issn><isbn>9780780337671</isbn><isbn>0780337670</isbn><abstract>InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I/sub sc/ to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.1997.654256</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 0160-8371
ispartof Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997, 1997, p.995-998
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language eng
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source IEEE Xplore All Conference Series
subjects Capacitance-voltage characteristics
Current measurement
Extraterrestrial measurements
Failure analysis
Indium phosphide
Laboratories
Photovoltaic cells
Protons
Silicon
Space technology
title Spectral response of InP/Si solar cells irradiated to high proton fluences
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A49%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Spectral%20response%20of%20InP/Si%20solar%20cells%20irradiated%20to%20high%20proton%20fluences&rft.btitle=Conference%20Record%20of%20the%20Twenty%20Sixth%20IEEE%20Photovoltaic%20Specialists%20Conference%20-%201997&rft.au=Messenger,%20S.R.&rft.date=1997&rft.spage=995&rft.epage=998&rft.pages=995-998&rft.issn=0160-8371&rft.isbn=9780780337671&rft.isbn_list=0780337670&rft_id=info:doi/10.1109/PVSC.1997.654256&rft_dat=%3Cproquest_CHZPO%3E27344747%3C/proquest_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i203t-b6852c490da5584ff6d435dc88a0c763a7bd4c5aa28e03e8767da49aae2e91df3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27344747&rft_id=info:pmid/&rft_ieee_id=654256&rfr_iscdi=true